Abstract

Analytical and numerical solutions of the 2D transient dual-phase-lag (DPL) heat conduction equation are presented in this article. The geometry is that of a simplified metal oxide semiconductor field effect transistor with a heater placed on it. A temperature jump boundary condition is used on all boundaries in order to consider boundary phonon scattering at the micro- and nanoscale. A combination of a Laplace transformation technique and separation of variables is used to solve governing equations analytically, and a three-level finite difference scheme is employed to generate numerical results. The results are illustrated for three Knudsen numbers of 0.1, 1, and 10 at different instants of time. It is seen that the wave characteristic of the DPL model is strengthened by increasing the Knudsen number. It is found that the combination of the DPL model with the proposed mixed-type temperature boundary condition has the potential to accurately predict a 2D temperature distribution not only within the transistor itself but also in the near-boundary region.