Two-dimensional type-II XMoSiP2/BAs (X= S, Se) van der Waals heterostructures for highly efficient excitonic solar cells

ساختارهای ناهمگون وان در والسی دوبعدی نوع دو مبتنی بر XMoSiP2/BAs (X=S, Se) برای سلول های خورشیدی اکسایتونیک با بازده بالا

Surface-functionalization induced spintronic and photocatalytic features in group-III monochalcogenide monolayers: A first-principles study

ویژگی‌های اسپینترونیکی و فوتوکاتالیستی ناشی از تغییر سطحی در تک‌لایه‌های مونوکالکوژنید گروه III: یک مطالعه اصول اولیه

Enhanced performance of Janus XMSiY2 (X=S, Se; M=Mo, W; and Y=N, P) monolayers for photocatalytic water splitting via strain engineering

کارآیی بهبود یافته ی تک‌لایه‌های نامتقارن XMSiY2 (X=S, Se; M=Mo, W; و Y=N, P) برای تقسیم آب فوتوکاتالیستی از طریق مهندسی کرنش

First-principles prediction of two-dimensional Janus XMInZ2(X = Cl, Br, I;M = Mg, Ca; and Z = S, Se, and Te) with promising spintronic and photocatalytic properties

First-principles prediction of two-dimensional Janus XMInZ2(X = Cl, Br, I;M = Mg, Ca; and Z = S, Se, and Te) with promising spintronic and photocatalytic properties

Electronic, spintronic, and piezoelectric properties of new Janus Zn A X Y ( A = Si , Ge , Sn , and X , Y = S , Se , Te ) monolayers

Electronic, spintronic, and piezoelectric properties of new Janus Zn A X Y ( A = Si , Ge , Sn , and X , Y = S , Se , Te ) monolayers

Investigation of Electronic Properties and Interlayer Current Characteristics of Janus two-dimensional MoSi2PmAsn and MoSi2AsmSbn

بررسی خواص الکترونیکی و مشخصه ی جریان بین لایه ای مواد دوبعدی نامتقارن MoSi2PmAsn و MoSi2AsmSbn

First-principle study on quintuple-atomic-layer Janus MTeSiX2 (M= Mo, W; X=N, P, As) monolayers with intrinsic Rashba spin-splitting and Mexican hat dispersion

First-principle study on quintuple-atomic-layer Janus MTeSiX2 (M= Mo, W; X=N, P, As) monolayers with intrinsic Rashba spin-splitting and Mexican hat dispersion

Electronic and spintronic properties of Janus MSi2PxAsy (M = Mo,W) monolayers

Electronic and spintronic properties of Janus MSi2PxAsy (M = Mo,W) monolayers

Tuning the Rashba spin splitting in Janus MoSeTe and WSeTe van der Waals heterostructures by vertical strain

Tuning the Rashba spin splitting in Janus MoSeTe and WSeTe van der Waals heterostructures by vertical strain

Field-Effect Transistor Based on MoSi2N4 and WSi2N4 Monolayers Under Biaxial Strain: A Computational Study of the Electronic Properties

Field-Effect Transistor Based on MoSi2N4 and WSi2N4 Monolayers Under Biaxial Strain: A Computational Study of the Electronic Properties

Vertical strain-induced modification of the electrical and spin properties of monolayer MoSi2X4 (X = N, P, As and Sb)

Vertical strain-induced modification of the electrical and spin properties of monolayer MoSi2X4 (X = N, P, As and Sb)

Stacking-dependent Rashba spin-splitting in Janus bilayer transition metal dichalcogenides: The role of in-plane strain and out-of-plane electric field

Stacking-dependent Rashba spin-splitting in Janus bilayer transition metal dichalcogenides: The role of in-plane strain and out-of-plane electric field

Structural, electrical and optical properties of bilayer SiX (X = N, P, As and Sb)

Structural, electrical and optical properties of bilayer SiX (X = N, P, As and Sb)

Structural, electrical, and Rashba properties of monolayer Janus Si2XY (X,Y =P, As, Sb, and Bi)

Structural, electrical, and Rashba properties of monolayer Janus Si2XY (X,Y =P, As, Sb, and Bi)

Interplay between stacking order and in-plane strain on the electrical properties of bilayer antimonene

Interplay between stacking order and in-plane strain on the electrical properties of bilayer antimonene

The electrical and spin properties of monolayer and bilayer Janus HfSSe under vertical electrical field

The electrical and spin properties of monolayer and bilayer Janus HfSSe under vertical electrical field

Band structure and Schottky barrier modulation in multilayer black phosphorene and black phosphorene/graphene heterostructure through out-of-plane strain

Band structure and Schottky barrier modulation in multilayer black phosphorene and black phosphorene/graphene heterostructure through out-of-plane strain

Normal compressive strain-induced modulation of electronic and mechanical properties of multilayer MoS2 and Graphene/MoS2 heterostructure: A first-principles study

Normal compressive strain-induced modulation of electronic and mechanical properties of multilayer MoS2 and Graphene/MoS2 heterostructure: A first-principles study

Investigation and Modeling of Negative Bias temperature Instability (NBTI) and Hot Carrier Injection (HCI) Induced Degradation in Multi-Gate Nano-Devices

بررسی و مدل‌سازی اثر ناپایداری در دمای بالا و بایاس منفی (NBTI) و تزریق حامل‌های پرانرژی (HCI) در افزاره‌های چندگیتی نانومتری

Vertical Tunneling Graphene Heterostructure-Based Transistor for Pressure Sensing

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On the role of disorder on graphene and graphene nanoribbon-based vertical tunneling transistors

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A Comparative Study of Tunneling FETs Based on Graphene and GNR Heterostructures

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Device characteristics and tight binding based modeling of bilayer graphene field-effect transistor

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Elastic properties of Multilayer Phosphorene and Graphene/Phosphorene Heterostructure

Elastic properties of Multilayer Phosphorene and Graphene/Phosphorene Heterostructure

Molecular Dynamics Simulation of Elastic Properties of Multilayer MoS2 and ‎Graphene/MoS2 Heterostructure

Molecular Dynamics Simulation of Elastic Properties of Multilayer MoS2 and ‎Graphene/MoS2 Heterostructure

بررسی خواص الاستیک دی‌سولفید مولیبدن چند لایه تحت تنش عمودی فشاری

Investigation of Elastic Properties of Multilayer Molybdenum Disulfide under Normal Compressive Stress

Strain Effect on the Device Characteristics of Vertical Tunneling Graphene Heterostructure-Based Transistor

Strain Effect on the Device Characteristics of Vertical Tunneling Graphene Heterostructure-Based Transistor

A Computational Study of Line-Edge Roughness in Tunneling FETs Based on GNR Heterostructures

A Computational Study of Line-Edge Roughness in Tunneling FETs Based on GNR Heterostructures

Numerical Study of Tunneling FETs Based on Vertical Graphene Heterostructures

Numerical Study of Tunneling FETs Based on Vertical Graphene Heterostructures