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Nayereh Ghobadi

Publications in Journals

International ISI19.  A. Rezavand, N. Ghobadi
First-principle study on quintuple-atomic-layer Janus MTeSiX2 (M= Mo, W; X=N, P, As) monolayers with intrinsic Rashba spin-splitting and Mexican hat dispersion
Materials Science in Semiconductor Processing  Accepted 2022.  
داخلي-ISC18.  نیره قبادی  
بررسی خواص الکترونیکی و مشخصه ی جریان بین لایه ای مواد دوبعدی نامتقارن MoSi2PmAsn و MoSi2AsmSbn
مدل سازی در مهندسی  در دست چاپ 1401.  
International ISI17.  A. Rezavand , N. Ghobadi , and B. Behnamghader
Electronic and spintronic properties of Janus MSi2PxAsy (M = Mo,W) monolayers
Physical Review B Vol. 106 Issue 3 (2022PP. 1-10 DOI: https://doi.org/10.1103/PhysRevB.106.035. 
International ISI16.  N, Ghobadi, M, Hosseini, S. B. Touski
Field-Effect Transistor Based on MoSi2N4 and WSi2N4 Monolayers Under Biaxial Strain: A Computational Study of the Electronic Properties
IEEE Transactions on Electron Devices Vol. 69 Issue 2 (2022PP. 863-869 DOI: 10.1109/TED.2021.3138377. 
International ISI15.  A. Rezavand, N. Ghobadi
Tuning the Rashba spin splitting in Janus MoSeTe and WSeTe van der Waals heterostructures by vertical strain
Journal of Magnetism and Magnetic Materials Vol. 544 (2022PP. 1-8 DOI: 10.1016/j.jmmm.2021.168721. 
International ISI14.  S. B. Touski, N.Ghobadi
Vertical Strain-Induced Modification of Electrical and Spin Properties of Monolayer MoSi2X4 (X= N, P, As and Sb)
Journal of Physics D: Applied Physics Vol. 54 Issue 48 (2021PP. 1-10 DOI: 10.1088/1361-6463/ac1d13. 
International ISI13.  N. Ghobadi, S. B. Touski
Structural, Electrical and Optical Properties of Bilayer SiX (X= N, P, As and Sb)
Journal of Physics: Condensed Matter Vol. 33 Issue 28 (2021PP. 1-10 DOI: 10.1088/1361-648X/abfdf0. 
International ISI12.  S. B. Touski, N. Ghobadi
Structural, Electrical and Rashba Properties of Monolayer Janus Si2XY (X, Y = P, As, Sb and Bi)
Physical Review B Vol. 103 Issue 16 (2021PP. 1-8 DOI: 10.1103/PhysRevB.103.165404. 
International ISI11.  A. Rezavand, N. Ghobadi
Stacking-dependent Rashba spin-splitting in Janus bilayer transition metal dichalcogenides: the role of in-plane strain and out-of-plane electric field
Physica E: Low-dimensional Systems and Nanostructures Vol. 132 (2021PP. 1-8 DOI: 10.1016/j.physe.2021.114768. 
International ISI10.  N. Ghobadi, S. B. Touski
The Electrical and Spin Properties of Monolayer and Bilayer Janus HfSSe under Vertical Electrical Field
Journal of Physics: Condensed Matter Vol. 33 Issue 8 (2020PP. 1-8 DOI: 10.1088/1361-648X/abcb12. 
International ISI9.  S. B. Touski, N. Ghobadi
Interplay between stacking order and in-plane strain on the electrical properties of bilayer antimonene
Physica E: Low-dimensional Systems and Nanostructures Vol. 126 (2021PP. 1-6 DOI: 10.1016/j.physe.2020.114407. 
International ISI8.  M. Shamekhi, N. Ghobadi,
Band structure and Schottky barrier modulation in multilayer black phosphorene and black phosphorene/graphene heterostructure through out-of-plane strain
Physica B: Condensed Matter Vol. 580 (2020PP. 1-9 DOI: https://doi.org/10.1016/j.physb.2019.411. 
International ISI7.  N. Ghobadi
Normal compressive strain-induced modulation of electronic and mechanical properties of multilayer MoS2 and Graphene/MoS2 heterostructure: A first-principles study
Physica E: Low-dimensional Systems and Nanostructures Vol. 111 (2019PP. 158-166 DOI: https://doi.org/10.1016/j.physe.2019.03.. 
International ISI6.  N. Ghobadi
A comparative study of the mechanical properties of multilayer MoS2 and graphene/MoS2 heterostructure: effects of temperature, number of layers and stacking order
Current Applied Physics Vol. 17 Issue 11 (2017PP. 1483-1493 DOI: 10.1016/j.cap.2017.08.018. 
International ISI5.  N. Ghobadi, and M. Pourfath
Vertical Tunneling Graphene Heterostructure-Based Transistor for Pressure Sensing
IEEE Electron Device Letters Vol. 36 Issue 3 (2015PP. 280-282 DOI: 10.1109/LED.2014.2388452. 
International-ISI4.  N. Ghobadi, and M. Pourfath
A Comparative Study of Tunneling FETs Based on Graphene and GNR Heterostructures
IEEE Transactions on Electron Devices Vol. 61 Issue 1 (2014PP. 186-192 DOI: 10.1109/TED.2013.2291788. 
International-ISI3.  N. Ghobadi, and M. Pourfath
On the Role of Disorder on Graphene and Graphene Nanoribbon-Based Vertical Tunneling Transistors
Journal of Applied Physics Vol. 116 Issue 18 (2014P. 184506 DOI: 10.1063/1.4901584. 
International-ISI2.  N. Ghobadi, and Y. Abdi
Device Characteristics and Tight Binding Based Modeling of Bilayer Graphene Field-Effect Transistor
Current Applied Physics Vol. 13 Issue 6 (2013PP. 1082-1089 DOI: 10.1016/j.cap.2013.02.016. 
National-ISC1.  N. Ghobadi, and A. Afzali-Kusha
Investigation and Modeling of Negative Bias temperature Instability (NBTI) and Hot Carrier Injection (HCI) Induced Degradation in Multi-Gate Nano-Devices
Journal of Iranian Association of Electrical and Electronics Engineers Vol. 12 Issue 2 (2015PP. 1-14. 


Presentations in Seminars & Congress


National 13. Mahdi Shamekhi, Nayereh Ghobadi
Elastic properties of Multilayer Phosphorene and Graphene/Phosphorene Heterostructure  

7th International Conference on Nanostructures


Institute for Nanoscience & Nanotechnology, Sharif University of Technology, تهران-ایران, 27 February - 1 March 2018.  
National 12.  N. Ghobadi
Molecular Dynamics Simulation of Elastic Properties of Multilayer MoS2 and Graphene/MoS2 Heterostructure
25th Iranian Conference on Electrical Engineering (ICEE)
Khajeh Nasir Toosi University of Technology, Tehran-Iran, 4 - 2 May 2017.  
National 11.  نیره قبادی
بررسی خواص الاستیک دی‌سولفید مولیبدن چند لایه تحت تنش عمودی فشاری
سیزدهمین کنفرانس ماده چگال انجمن فیزیک ایران
انجمن فیزیک ایران, تهران-ایران, 13 - 14 بهمن 1395.  
National 10.  N. Ghobadi
Strain Effect on the Device Characteristics of Vertical Tunneling Graphene Heterostructure-Based Transistor
24th Iranian Conference on Electrical Engineering (ICEE)
Shiraz University, Shiraz-Iran, 10 - 12 May 2016.  
International 9.  N. Ghobadi, and M. Pourfath
A Computational Study of Line-Edge Roughness in Tunneling FETs Based on GNR Heterostructures
6th International Conference on Nanostructures (ICNS6),
Sharif University of Technology, Kish-Iran, 10 - 7 March 2016.  
International 8.  N. Ghobadi, and M. Pourfath
Numerical Study of Tunneling FETs Based on Vertical Graphene Heterostructures
5th International Conference on Nanostructures (ICNS5)
Sharif University of Technology, Kish-Iran, 9 - 6 March 2014.  
International 7.  N. Ghobadi, A. Afzali-Kusha and E. Asl-Soleimani
Analytical Modeling of Hot Carrier Injection Induced Degradation in Triple Gate Bulk FinFETs
1st Asia Symposium on Quality Electronic Design (ASQED 2009)
Kuala Lumpur-Malaysia July 2009.  
International 6.  N. Ghobadi, A. Afzali-Kusha and E. Asl-Soleimani
Modeling Effect of Negative Bias Temperature Instability on Potential Distribution and Degradation of Double-gate MOSFETs
10th International Conference on Ultimate Integration of Silicon (ULIS 2009)
Aachen-Germany March 2009.  
International 5.  N. Ghobadi, A. Afzali-Kusha and E. Asl-Soleimani
Analytical Modeling of Negative Bias Temperature Instability in Triple Gate MOSFETs
10th International Conference on Ultimate Integration of Silicon (ULIS 2009)
Aachen-Germany March 2009.  
National 4.  N. Ghobadi, A. Afzali-Kusha and E. Asl-Soleimani
Modeling of Floating-Body Effect on Negative Bias Temperature Instability Degradation of Double-gate MOSFETs
18th Iranian Conference on Electrical Engineering (ICEE 2010)
Isfahan University of Technology, Isfahan-Iran May 2010.  
National 3.  N. Ghobadi, A. Afzali-Kusha and E. Asl-Soleimani
Modeling of Hot Carrier Induced Substrate Current and Degradation in Triple Gate Bulk FinFETs
18th Iranian Conference on Electrical Engineering (ICEE 2010)
Isfahan University of Technology, Isfahan-Iran May 2010.  
National 2.  N. Ghobadi, R. Majidi, M. Mehran and A. Afzali-Kusha
Low Power 4-Bit Full Adder Cells in Subthreshold Regime
18th Iranian Conference on Electrical Engineering (ICEE 2010)
Isfahan University of Technology, Isfahan-Iran May 2010.  
National 1.  N. Ghobadi, A. Afzali-Kusha and E. Asl-Soleimani
Investigation and Modeling of Reliability Challenges of the Nano-Devices
6th Nanotechnology Iranian Student Conference (NISC)
Iran Nanotechnology Initiative Council, Tehran-Iran December 2009.  

 

 

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