Computational design of sub-5 nm high-performance double-gate FETs based on two-dimensional Janus LiMSSe (M = Al, Ga, In) monolayers

XMAY2/GaZ (X = Cl, Br; M = Mg, Ca; A = Ga, In; Y = S, Se; Z = As, P, Sb) heterojunctions: Z-scheme structures for enhanced photocatalytic hydrogen evolution

Direct Z-Scheme LiMXY/GaZ (M = Al, Ga, In; X = S, Se; Y = Se, Te; Z = P, As) van der Waals Heterostructures: Promising Photocatalysts with High Solar-to-Hydrogen Efficiency for Water Splitting

Janus MoXYCl (X = S, Se, Te; Y = N, P, As) monolayers: a promising family of 2D materials for high-performance p–i–n photodetectors and spintronic applications

First-principles investigation of XMoSiY2/XWSiY2 and XMSiY2/MoSeTe (X= Se, Te; M = Mo, W; Ydouble bondP, As) van der Waals heterostructures for high-efficiency photovoltaic applications

Prediction of Janus XYSTe (X=Li, Na; Y=Al, Ga, In) monolayers with tunable Rashba effect for spintronic devices

Two-dimensional XMoSiP2/BP (X= S, Se) Heterostructures as Efficient Photocatalysts for Overall Water Splitting

First-Principles Investigation of Janus MgZnXY (X, Y = O, S, Se, Te; X ≠ Y) Monolayers for Short-Channel Field Effect Transistor

Janus XMPYS (X=Se, Te; M=Mo, W; Y=Al, Ga) monolayers with enhanced spintronic properties and boosted solar-to-hydrogen efficiency for photocatalytic water splitting

Two-dimensional type-II XMoSiP2/BAs (X= S, Se) van der Waals heterostructures for highly efficient excitonic solar cells

Surface-functionalization induced spintronic and photocatalytic features in group-III monochalcogenide monolayers: A first-principles study

Enhanced performance of Janus XMSiY2 (X=S, Se; M=Mo, W; and Y=N, P) monolayers for photocatalytic water splitting via strain engineering

First-principles prediction of two-dimensional Janus XMInZ2(X = Cl, Br, I;M = Mg, Ca; and Z = S, Se, and Te) with promising spintronic and photocatalytic properties

Electronic, spintronic, and piezoelectric properties of new Janus Zn A X Y ( A = Si , Ge , Sn , and X , Y = S , Se , Te ) monolayers

Investigation of Electronic Properties and Interlayer Current Characteristics of Janus two-dimensional MoSi2PmAsn and MoSi2AsmSbn

First-principle study on quintuple-atomic-layer Janus MTeSiX2 (M= Mo, W; X=N, P, As) monolayers with intrinsic Rashba spin-splitting and Mexican hat dispersion

Electronic and spintronic properties of Janus MSi2PxAsy (M = Mo,W) monolayers

Tuning the Rashba spin splitting in Janus MoSeTe and WSeTe van der Waals heterostructures by vertical strain

Field-Effect Transistor Based on MoSi2N4 and WSi2N4 Monolayers Under Biaxial Strain: A Computational Study of the Electronic Properties

Vertical strain-induced modification of the electrical and spin properties of monolayer MoSi2X4 (X = N, P, As and Sb)

Stacking-dependent Rashba spin-splitting in Janus bilayer transition metal dichalcogenides: The role of in-plane strain and out-of-plane electric field

Structural, electrical and optical properties of bilayer SiX (X = N, P, As and Sb)

Structural, electrical, and Rashba properties of monolayer Janus Si2XY (X,Y =P, As, Sb, and Bi)

Interplay between stacking order and in-plane strain on the electrical properties of bilayer antimonene

The electrical and spin properties of monolayer and bilayer Janus HfSSe under vertical electrical field

Band structure and Schottky barrier modulation in multilayer black phosphorene and black phosphorene/graphene heterostructure through out-of-plane strain

Normal compressive strain-induced modulation of electronic and mechanical properties of multilayer MoS2 and Graphene/MoS2 heterostructure: A first-principles study

Investigation and Modeling of Negative Bias temperature Instability (NBTI) and Hot Carrier Injection (HCI) Induced Degradation in Multi-Gate Nano-Devices

Vertical Tunneling Graphene Heterostructure-Based Transistor for Pressure Sensing

On the role of disorder on graphene and graphene nanoribbon-based vertical tunneling transistors

A Comparative Study of Tunneling FETs Based on Graphene and GNR Heterostructures

Device characteristics and tight binding based modeling of bilayer graphene field-effect transistor

Elastic properties of Multilayer Phosphorene and Graphene/Phosphorene Heterostructure

Molecular Dynamics Simulation of Elastic Properties of Multilayer MoS2 and ‎Graphene/MoS2 Heterostructure

Investigation of Elastic Properties of Multilayer Molybdenum Disulfide under Normal Compressive Stress

Strain Effect on the Device Characteristics of Vertical Tunneling Graphene Heterostructure-Based Transistor

A Computational Study of Line-Edge Roughness in Tunneling FETs Based on GNR Heterostructures

Numerical Study of Tunneling FETs Based on Vertical Graphene Heterostructures