خانه :: اساتید :: اخبار

بازدید:10891   بروزرسانی: 03-03-1398

Nayereh Ghobadi

Publications in Journals

International ISI7.  Nayereh Ghobadi
Normal compressive strain-induced modulation of electronic and mechanical properties of multilayer MoS2 and Graphene/MoS2 heterostructure: A first-principles study
Physica E: Low-dimensional Systems and Nanostructures Vol. 111 (2019PP. 158-166 DOI: https://doi.org/10.1016/j.physe.2019.03.. 
International-ISI6.  N. Ghobadi
A comparative study of the mechanical properties of multilayer MoS2 and graphene/MoS2 heterostructure: effects of temperature, number of layers and stacking order
Current Applied Physics Vol. 17 Issue 11 (2017PP. 1483-1493 DOI: 10.1016/j.cap.2017.08.018. 
International-ISI5.  N. Ghobadi, and M. Pourfath
Vertical Tunneling Graphene Heterostructure-Based Transistor for Pressure Sensing
IEEE Electron Device Letters Vol. 36 Issue 3 (2015PP. 280-282 DOI: 10.1109/LED.2014.2388452. 
International-ISI4.  N. Ghobadi, and M. Pourfath
A Comparative Study of Tunneling FETs Based on Graphene and GNR Heterostructures
IEEE Transactions on Electron Devices Vol. 61 Issue 1 (2014PP. 186-192 DOI: 10.1109/TED.2013.2291788. 
International-ISI3.  N. Ghobadi, and M. Pourfath
On the Role of Disorder on Graphene and Graphene Nanoribbon-Based Vertical Tunneling Transistors
Journal of Applied Physics Vol. 116 Issue 18 (2014P. 184506 DOI: 10.1063/1.4901584. 
International-ISI2.  N. Ghobadi, and Y. Abdi
Device Characteristics and Tight Binding Based Modeling of Bilayer Graphene Field-Effect Transistor
Current Applied Physics Vol. 13 Issue 6 (2013PP. 1082-1089 DOI: 10.1016/j.cap.2013.02.016. 
National-ISC1.  N. Ghobadi, and A. Afzali-Kusha
Investigation and Modeling of Negative Bias temperature Instability (NBTI) and Hot Carrier Injection (HCI) Induced Degradation in Multi-Gate Nano-Devices
Journal of Iranian Association of Electrical and Electronics Engineers Vol. 12 Issue 2 (2015PP. 1-14. 


Presentations in Seminars & Congress


National 13. Mahdi Shamekhi, Nayereh Ghobadi
Elastic properties of Multilayer Phosphorene and Graphene/Phosphorene Heterostructure  

7th International Conference on Nanostructures


Institute for Nanoscience & Nanotechnology, Sharif University of Technology, تهران-ایران, 27 February - 1 March 2018.  
National 12.  N. Ghobadi
Molecular Dynamics Simulation of Elastic Properties of Multilayer MoS2 and Graphene/MoS2 Heterostructure
25th Iranian Conference on Electrical Engineering (ICEE)
Khajeh Nasir Toosi University of Technology, Tehran-Iran, 4 - 2 May 2017.  
National 11.  نیره قبادی
بررسی خواص الاستیک دی‌سولفید مولیبدن چند لایه تحت تنش عمودی فشاری
سیزدهمین کنفرانس ماده چگال انجمن فیزیک ایران
انجمن فیزیک ایران, تهران-ایران, 13 - 14 بهمن 1395.  
National 10.  N. Ghobadi
Strain Effect on the Device Characteristics of Vertical Tunneling Graphene Heterostructure-Based Transistor
24th Iranian Conference on Electrical Engineering (ICEE)
Shiraz University, Shiraz-Iran, 10 - 12 May 2016.  
International 9.  N. Ghobadi, and M. Pourfath
A Computational Study of Line-Edge Roughness in Tunneling FETs Based on GNR Heterostructures
6th International Conference on Nanostructures (ICNS6),
Sharif University of Technology, Kish-Iran, 10 - 7 March 2016.  
International 8.  N. Ghobadi, and M. Pourfath
Numerical Study of Tunneling FETs Based on Vertical Graphene Heterostructures
5th International Conference on Nanostructures (ICNS5)
Sharif University of Technology, Kish-Iran, 9 - 6 March 2014.  
International 7.  N. Ghobadi, A. Afzali-Kusha and E. Asl-Soleimani
Analytical Modeling of Hot Carrier Injection Induced Degradation in Triple Gate Bulk FinFETs
1st Asia Symposium on Quality Electronic Design (ASQED 2009)
Kuala Lumpur-Malaysia July 2009.  
International 6.  N. Ghobadi, A. Afzali-Kusha and E. Asl-Soleimani
Modeling Effect of Negative Bias Temperature Instability on Potential Distribution and Degradation of Double-gate MOSFETs
10th International Conference on Ultimate Integration of Silicon (ULIS 2009)
Aachen-Germany March 2009.  
International 5.  N. Ghobadi, A. Afzali-Kusha and E. Asl-Soleimani
Analytical Modeling of Negative Bias Temperature Instability in Triple Gate MOSFETs
10th International Conference on Ultimate Integration of Silicon (ULIS 2009)
Aachen-Germany March 2009.  
National 4.  N. Ghobadi, A. Afzali-Kusha and E. Asl-Soleimani
Modeling of Floating-Body Effect on Negative Bias Temperature Instability Degradation of Double-gate MOSFETs
18th Iranian Conference on Electrical Engineering (ICEE 2010)
Isfahan University of Technology, Isfahan-Iran May 2010.  
National 3.  N. Ghobadi, A. Afzali-Kusha and E. Asl-Soleimani
Modeling of Hot Carrier Induced Substrate Current and Degradation in Triple Gate Bulk FinFETs
18th Iranian Conference on Electrical Engineering (ICEE 2010)
Isfahan University of Technology, Isfahan-Iran May 2010.  
National 2.  N. Ghobadi, R. Majidi, M. Mehran and A. Afzali-Kusha
Low Power 4-Bit Full Adder Cells in Subthreshold Regime
18th Iranian Conference on Electrical Engineering (ICEE 2010)
Isfahan University of Technology, Isfahan-Iran May 2010.  
National 1.  N. Ghobadi, A. Afzali-Kusha and E. Asl-Soleimani
Investigation and Modeling of Reliability Challenges of the Nano-Devices
6th Nanotechnology Iranian Student Conference (NISC)
Iran Nanotechnology Initiative Council, Tehran-Iran December 2009.